• Porous GaN firm Porotech completes £15m seed round

    Gallium nitride (GaN) material technology developer Poro Technologies (Porotech, a recent spinoff from the UK’s University of Cambridge) has closed a £15m seed round investment to develop a pilot plant in Cambridge and its first major products The seed round was coled by the University of Cambridge’s commercialization arm Cambridge Enterprise

  • Gallium Nitride | Developing Unique Materials For

    Galliumnitride is a wonder solidstate material Gallium nitride (GaN) is a semiconductor commonly used in light emitting diodes It is a hard material with a crystal structure, a property that makes it desirable for use in opto applications and highpower devices

  • Yaskawa to invest in highvoltage gallium nitride

    Highvoltage gallium nitride (GaN) semiconductor vendor Transporm has secured $15 million in funding from Japan's Yaskawa Electric, bringing the total it has raised so far to more than $230 million Transphorm (Goleta, Calif), founded in 2007, said it plans to use the funding for product development

  • GaN Systems ships 20 millionth GaN transistor

    GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitridebased power switching semiconductors for power conversion and control applications) says that it has shipped its 20 millionth GaN transistor and that its factory partners are on schedule to complete a fortyfold capacity expansion in 2021

  • Poro Technologies | VentureRadar

    Porotech is a Gallium Nitride (GaN) material technology developer and a spinout from the University of Cambridge Porotech focuses on the development of high performance and energy efficient widebandgap compound GaN semiconductors by applying cuttingedge material technologies and solutions to unleash the full potential of GaN to revolutionise the electronics industry

  • Gallium Nitride power switching devices to be shown

    OTTAWA, Ontario(BUSINESS WIRE)GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting at the 15th ECCE European Conference and Exhibition taking

  • IGSS GaN Pte Ltd Latest News on GanonSi Tech

    Singapore, 19 Nov 2020 – IGSS GaN PteLtd (IGaN), an internationallyrecognised technology developer and commercialisation experts in gallium nitrideonsilicon/silicon carbide (GaNonSi/SiC), and APRO Semicon, a global leader in power electronics total solution providers, put the wheels in motion as plans for a November kickoff meeting gets underway

  • Gallium nitride evaluation kit offer from GaN Systems

    OTTAWA, ON – April 2013 – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, will exhibit at the PCIM conference and exhibition and conference Visitors to stand 523, Hall 9 will be able to take advantage of a special introductory offer covering the company’s soontobeavailable evaluation kits

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  • Poro Technologies raise £15m – Cambridge Enterprise

    Poro Technologies (Porotech), the Gallium Nitride (GaN) material technology developer and a recent spinout from the University of Cambridge, has closed a £15 million seed round investment to develop a pilot plant in Cambridge and its first major products Poro Founders

  • VisIC and ZF partner on R&D effort to develop EV

    ZF Friedrichshafen AG and Israelbased VisIC Technologies Ltd, a developer of gallium nitride (GaN) devices for automotive highvoltage applications, are partnering to develop an EV inverter based on GaN semiconductor technology The partnership will see the two companies deepen their development efforts, based on VisIC D 3 GaN (Direct Drive Depletionmode GaN) semiconductor

  • Gallium Nitride | Developing Unique Materials For

    Gallium Nitride Technology Galliumnitride is a wonder solidstate material Gallium nitride (GaN) is a semiconductor commonly used in light emitting diodes It is a hard material with a crystal structure, a property that makes it desirable for use in opto applications and highpower devices

  • Yaskawa to invest in highvoltage gallium nitride

    Yaskawa to invest in highvoltage gallium nitride developer Friday, December 1, 2017 Highvoltage gallium nitride (GaN) semiconductor vendor Transporm has secured $15 million in funding from Japan's Yaskawa Electric, bringing the total it has raised so far to more than $230 million

  • Kyocera Corp Acquires GaN Laser Technology

    KYOTO, Japan, Nov 12, 2020 — Kyocera announced it will acquire Goleda, Califbased SLD Laser, a developer of visible laser sources for display, automotive, and specialty applications SLD (Soraa Laser Diode), commercializes gallium nitride (GaN)based laser light sources and produces GaNbased diode products The company was established in

  • IGSS GaN Pte Ltd Latest News on GanonSi Tech

    Singapore, 19 Nov 2020 – IGSS GaN PteLtd (IGaN), an internationallyrecognised technology developer and commercialisation experts in gallium nitrideonsilicon/silicon carbide (GaNonSi/SiC), and APRO Semicon, a global leader in power electronics total solution providers, put the wheels in motion as plans for a November kickoff meeting gets underway

  • Poro Technologies | VentureRadar

    "Porotech is a Gallium Nitride (GaN) material technology developer and a spinout from the University of Cambridge Porotech focuses on the development of high performance and energy efficient widebandgap compound GaN semiconductors by applying cuttingedge material technologies and solutions to unleash the full potential of GaN to revolutionise

  • GaN Systems’ gallium nitride semiconductors for more

    GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting on Booth 117 at the IEEE Energy Conversion Expo

  • GaN Systems ships 20 millionth GaN transistor

    News: Microelectronics 8 February 2021 GaN Systems ships 20 millionth GaN transistor GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitridebased power switching semiconductors for power conversion and control applications) says that it has shipped its 20 millionth GaN transistor and that its factory partners are on schedule to complete a fortyfold capacity

  • Vertical 3D gallium nitride fieldeffect transistors

    Gallium nitride (GaN) is a very promising candidate for future power electronics due to its wide band gap, high critical field strength and large electron mobility Its superior material properties can lead to substantial efficiency improvement and size reduction with respect to siliconbased elements in switching applications

  • Gallium nitride evaluation kit offer from GaN Systems

    OTTAWA, ON – April 2013 – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, will exhibit at the PCIM conference and exhibition and conference Visitors to stand 523, Hall 9 will be able to take advantage of a special introductory offer covering the company’s soontobeavailable evaluation kits

  • Gallium Nitride | Developing Unique Materials For

    Gallium Nitride Technology Galliumnitride is a wonder solidstate material Gallium nitride (GaN) is a semiconductor commonly used in light emitting diodes It is a hard material with a crystal structure, a property that makes it desirable for use in opto applications and highpower devices

  • Yaskawa to invest in highvoltage gallium nitride

    Yaskawa to invest in highvoltage gallium nitride developer Friday, December 1, 2017 Highvoltage gallium nitride (GaN) semiconductor vendor Transporm has secured $15 million in funding from Japan's Yaskawa Electric, bringing the total it has raised so far to more than $230 million

  • Poro Technologies | VentureRadar

    "Porotech is a Gallium Nitride (GaN) material technology developer and a spinout from the University of Cambridge Porotech focuses on the development of high performance and energy efficient widebandgap compound GaN semiconductors by applying cuttingedge material technologies and solutions to unleash the full potential of GaN to revolutionise

  • What is Gallium Nitride New Technology GaN for PD

    Actually, gallium nitride, like silicon, has three main modes, one called IDM, from beginning to end, doing everything, from design to manufacturing to testing Another is, for example, Qualcomm, which belongs to the Fabless mode, does the design by itself, and then gives the OEM to TSMC, which belongs to the OEM model

  • GaN Systems’ gallium nitride semiconductors for more

    GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting on Booth 117 at the IEEE Energy Conversion Expo

  • Vertical 3D gallium nitride fieldeffect transistors

    Gallium nitride (GaN) is a very promising candidate for future power electronics due to its wide band gap, high critical field strength and large electron mobility Its superior material properties can lead to substantial efficiency improvement and size reduction with respect to siliconbased elements in switching applications

  • Gallium nitride evaluation kit offer from GaN Systems

    OTTAWA, ON – April 2013 – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, will exhibit at the PCIM conference and exhibition and conference Visitors to stand 523, Hall 9 will be able to take advantage of a special introductory offer covering the company’s soontobeavailable evaluation kits

  • Si2

    Gallium Nitride (GaN) HEMT (High Electron Mobility Transistor) ASMHEMT – Developer: Macquarie University Version 10110 is available to CMC Members only Version 10100, released to CMC Members only in March of 2018, was made available to the public on September 24, 2019 Advanced Spice Model for High Electron Mobility Transistors (ASMHEMT)

  • Portfolio Low Carbon Innovation Fund

    Developer of cubic Gallium Nitride (GaN) LEDs to deliver low cost, high quality and efficient green and amber light with application in general lighting, microLED displays and automotive wwwkubossemi

  • ASUS Unveils Adol 65W Gallium Nitride: 65W Fast

    Like other similar devices, the Adol 65W Gallium Nitride is made using the chemical compound gallium nitride (GaN) It has improved thermal conductivity and hightemperature resistance By the way, thanks to him, the engineers managed to make the

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